KDW2504P Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual P-Channel 2.5V Specified PowerTrench MOSFET

SMD Type
Features
-3.8 A, - 20 V. RDS(ON) = 0.043 @ VGS = -4.5 V
RDS(ON) = 0.070 @ VGS =-2.5V
Low gate charge
High performance trench technology for extremely low RDS(ON)
Extended VGSS range ( 12V) for battery applications
ICIC
Product specification
KDW2504P
TSSOP-8
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Ambient (Note 1b)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
R JA
Rating
-20
12
-3.8
-30
1
0.6
-55 to 150
125
208
Unit
V
V
A
A
W
/W
/W
http://www.twtysemi.com
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4008-318-123
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