KDV287 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)

Product specification
KDV287
Features
High Capacitance Ratio : C2V/C25V=7.6(Typ.)
Low Series Resistance : rs=1.9 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maxim um Ratings Ta = 25
Param eter
Reverse Voltage
Peak Reverse Voltage
Junction Tem perature
Storage Tem perature Range
Sym bol
VR
VRM
Tj
T stg
V a lu e
30
35 (RL=10K )
125
-55 to +125
Unit
V
V
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Reverse Voltage
VR
IR = 1 A
Reverse Current
IR
VR = 28 V
Capacitance
C2V
C25V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
Capacitance Ratio
C2V/C25V
Series Resistance
rs
VR = 5V, f = 470 MHz
Note :
Available in matched group for capacitance to 6%.
C(Max.)-C(Min.)
C(Min.)
(VR=2~25V)
0.06
Min
Typ
Max
Unit
30
V
10
nA
4.2
0.53
5.7
pF
0.68
7.3
1.9
2.3
Marking
Marking
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