KDV262 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)

Product specification
KDV262
Features
High Capacitance Ratio : C2V/C25V=12.5(Typ.)
Low Series Resistance : rs=0.6 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute M axim um R atings T a = 25
Param eter
Reverse Voltage
Peak Reverse Voltage
Junction Tem perature
Storage Tem perature Range
Sym bol
VR
VRM
Tj
T stg
V a lu e
34
35 (RL=10K )
125
-55 to +125
U n it
V
V
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Reverse Voltage
VR
IR = 1 A
Reverse Current
IR
VR = 28 V
Capacitance
C2V
C25V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
Capacitance Ratio
C2V/C25V
C25V/C28V
Series Resistance
rs
VR = 5V, f = 470 MHz
Note :
Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
(VR=2~25V)
0.02
Min
Typ
Max
Unit
34
V
10
nA
33
35.5
38
pF
2.6
2.85
3.0
12
12.5
1.03
0.6
0.8
Marking
Marking
UQ
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