KDS8333C Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – 60V Complementary PowerTrench MOSFET

SMD Type
Features
N-Channel
4.1 A, 30 V RDS(ON) = 80m @ VGS = 10 V
RDS(ON) = 130m @ VGS =4.5V
P-Channel
-3.4 A, 30 V RDS(ON) = 130 m @ VGS =- 10 V
RDS(ON) = 200 m @ VGS =-4.5V
Low gate charge
High performance trench technology for extremely low RDS(ON).
High power and handling capability in a widely used
surface mount package.
TransistIoCrs
Product specification
KDS8333C
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JA
R JC
N-Channel
P- Channel
30
-60
16
20
4.1
-3.4
20
-20
2
1.6
1
0.9
-55 to 150
78
40
Unit
V
V
A
A
W
W
/W
/W
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