KDS5670 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 60V N-Channel PowerTrench TM MOSFETl

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Features
10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V
RDS(ON) = 0.017 @ VGS = 6 V
Low gate charge
Fast switching speed.
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
MOSFIECICT
Product specification
KDS5670
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power dissipation
(Note 1a)
Power dissipation
(Note 1b)
Power dissipation
(Note 1c)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
R JC
Rating
60
20
10
50
2.5
1.2
1
-55 to 175
50
25
Unit
V
V
A
A
W
/W
/W
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