KDS2572 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel UltraFET Trench MOSFET

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Features
RDS(ON) = 0.040 (Typ.), VGS = 10V
Qg(TOT) = 29nC (Typ.), VGS = 10V
Low QRR Body Diode
Maximized efficiency at high frequencies
UIS Rated
MOSFIECICT
Product specification
KDS2572
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25 ) *1
Drain Current Continuous (TC = 100 ) *1
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Case at 10 seconds *2
Thermal Resistance Junction to Case at steady state *2
*1 VGS = 10V, RqJA = 50 /W
*2 R JA is measured with 1.0in² copper on FR-4 board
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JC
R JA
R JA
Rating
150
20
4.9
3.1
2.5
20
-55 to 150
25
50
85
Unit
V
V
A
A
W
mW/
/W
/W
/W
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