KDS226 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

Product specification
KDS226
Features
Low Forward Voltage.:VF=0.9V(Typ.)
Fast Reverse Recovery Time:trr=1.6ns(Typ).
Small Total capacitance: CT=0.9pF(Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IO
IFM
IFSM
PD
Tj
Tstg
Rating
85
80
100
300
2
150
150
-55 to 150
Unit
V
V
mA
mA
A
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Marking
Marking
C3
Symbol
Testconditons
IF=1mA
VF IF=10mA
IF=100mA
IR VR=80V
CT VR=0V, f=1MHz
trr IF=10mA
Min Typ Max Unit
0.60
0.72
V
0.90 1.20
0.5
A
0.9 3.0 pF
1.6 4.0 nS
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