KDD2572 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel PowerTrench MOSFET

SMD Type
Features
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A
Qg(tot) = 26nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
TransistIoCrs
Product specification
KDD2572
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25 , VGS = 10V)
Drain Current Continuous (TC = 100 , VGS = 10V)
Drain Current Continuous(TC=100 ,VGS=10V,R
JA=52 /W))
Single Pulse Avalanche Energy *
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient to252
Thermal Resistance Junction to Ambient to252
,1in² copper pad area
* Starting TJ = 25 , L = 0.2 mH, IAS = 19A.
Symbol
VDSS
VGS
ID
EAS
PD
PD
TJ, TSTG
R JC
R JA
R JA
Rating
150
20
29
20
4
36
135
0.9
-55 to 175
1.11
100
52
Unit
V
V
A
A
A
mJ
W
W/
/W
/W
/W
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