KDB3652 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel PowerTrench MOSFET

SMD Type
Features
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A
Qg(tot) = 41nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Product specification
KDB3652 (FDB3652)
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous TC=25
TA=25
Power dissipation
Derate above 25
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
PD
RèJA
RèJC
Tch
Tstg
Rating
100
20
61
9
150
1.0
43
1.0
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
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4008-318-123
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