KDB2570 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 150V N-Channel PowerTrench MOSFET

SMD Type
Features
22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V
RDS(ON) = 90 m @ VGS = 6 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
Product specification
KDB2570(FDB2570)
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous
Drain current-Pulsed
Power dissipation
Derate above 25
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
RèJA
RèJC
Tch
Tstg
Rating
150
20
22
50
93
0.63
62.5
1.6
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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