KC856S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP General Purpose Double Transistor

SMD Type
Product specification
KC856S(BC856S)
Features
Two transistors in one package
Reduces number of components and board space
No mutual interference between the transistors.
SOT-363
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
1 E1
2 B1
3 C2
4 E2
5 B2
6 C1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
R JA
TJ, Tstg
Rating
-80
-65
-5
-100
200
416
-65 to +150
Unit
V
V
V
mA
mW
/W
Electrical Characteristics Ta = 25
Parameter
Collector-Cutoff Current
Emitter- cutoff current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Transistion frequency
Symbol
Testconditons
ICBO
VCB =- 30 V, IE = 0
VCB =- 30 V, IE = 0, TA = 150
IEBO IC=0,VEB=-5V
hFE IC = -2.0 mA, VCE = -5.0 V
IC = -10 mA, IB =- 0.5 mA
VCE(sat)
IC = -100 mA, IB =- 5.0 mA
VBE(sat) IC = -10 mA, IB=-0.5mA
Cob VCB = -10 V, f = 1.0 MHz
fT IC = -10 mA, VCE = -5.0V,f = 100 mHz
Min Typ Max Unit
-15 nA
-5.0 A
-100 nA
110
-100 mV
-300 mV
700
mV
2.5 pF
100
MHz
Marking
Marking
5F
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