KC847T Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN General Purpose Transistors

SMD Type
Product specification
KC847T(BC847T)
Features
Low current (max. 100 mA)
Low voltage (max. 45 V).
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
power dissipation
Junction temperature
Storage temperature
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
Symbol
Rating
Unit
VCBO
50
V
VCEO
45
V
VEBO
5
V
IC
100
mA
ICM
200
mA
PD
150
mW
Tj
150
Tstg
-65 to +150
1. Base
2. Emitter
3. Collecter
Electrical Characteristics Ta = 25
Parameter
collector cut-off current
emitter cut-off current
DC current gain
KC847AT
KC847BT
KC847CT
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
noise figure
transition frequency
* Pulse test: tp 300 ms;
0.02.
Symbol
Testconditons
ICBO
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150
IEBO IC = 0; VEB = 5 V
hFE IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
VCEsat
IC = 100 mA; IB = 5 mA; *
IC = 2 mA; VCE = 5 V
VBE
IC = 10 mA; VCE = 5 V
Cc IE = ie = 0; VCB = 10 V; f = 1 MHz
Ce IC = ic = 0; VEB = 500 mV; f = 1 MHz
F
IC = 200 A; VCE = 5 V; RS = 2 k ;f = 1
kHz; B = 200 Hz
fT IC = 10 mA; VCE = 5 V; f = 100 MHz
Marking
NO.
Marking
KC847AT
1E
KC847BT
1F
KC847CT
1G
Min Typ Max Unit
15 nA
5
A
100 nA
110
220
200
450
420
800
200 mV
400 mV
580
700 mV
770 mV
1.5 pF
11
pF
10 dB
100
MHz
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