KC818 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon AF Transistors

SMD Type
Product specification
KC818(BC818)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle 2%
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
5
V
IC
800
mA
PD
310
mW
Tj
150
Tstg
-65 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Symbol
Testconditons
VCBO IC = 10 A,VBE = 0
VCEO IC = 10 mA, IB = 0
VEBO ^{IE = 10 A, IC = 0}
ICES VCB =25 V, VBE= 0
IEBO VEB =4 V, IC = 0
IC =100 mA, VCE =1 V
hFE
IC =300 mA, VCE =1 V
VCE(sat) IC =500 mA, IB = 50 mA
VBE(on) VCE=1V,IC=300mA
Cob VCB=10V,f=1MHz
fT IC = 10 mA, VCE =5 V, f = 50 MHz
Min Typ Max Unit
30
V
25
V
5
V
100 nA
100 nA
100
630
60
0.7 V
1.2 V
12 pF
100
MHz
Marking
NO.
Marking
hFE
KC818-16
8GA
100 250
KC818-25
8GB
160 400
KC818-40
8GC
250 630
http://www.twtysemi.com
[e-mail]
4008-318-123
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