IRLML9303TRPBF Datasheet, PDF (1/2 Pages) International Rectifier – HEXFET Power MOSFET

Product specification
V_DS
V_{GS Max}
R_{DS(on) max}
(@V_GS = -10V)
R_{DS(on) max}
(@V_GS = -4.5V)
-30
V
± 20
V
165 m
270 m
IRLML9303TRPbF
HEXFET^® Power MOSFET
*
'
6
Micro3^TM (SOT-23)
IRLML9303TRPbF
Application(s)
System/Load Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Multi-vendor compatibility
results in Easier manufacturing
 Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
P_D @T_A = 25°C
Maximum Power Dissipation
P_D @T_A = 70°C
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_JA
R_JA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
Max.
-30
-2.3
-1.8
-12
1.25
0.80
0.01
± 20
-55 to + 150
Typ.
–––
–––
Max.
100
99
Units
V
A
W
W/°C
V
°C
Units
°C/W
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