IRLML2502 Datasheet, PDF (1/2 Pages) International Rectifier – HEXFET Power MOSFET

SSSMMMDDDTTTyyypppeee
■ Features
● Ultra Low On-Resistance
● N-Channel MOSFET
● Fast switching.
MMOOSSFFEIECITCT
Product specification
IRLML2502
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
1.Gate
2.E₂m_.Sitt_oe_rr_uce
3.co³l^.l^Dec^rt^aorⁱⁿ
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-to-source voltage
VGS
Continuous drain curent, @ VGS=4.5V,TA=25℃
ID
Continuous drain curent, @ VGS=4.5V,TA=70℃
Pulsed drain current *1
IDM
Power dissipation
@ TA=25℃
PD
Thermal Resistance,Junction- to-Ambient
RθJA
Junction and storage temperature range
TJ,TSTG
*1.Reptitive rating:pulse width limited by max.junction temperature.
*2.ISD≤ 0.93A,di/dt≤ 90A/μs,VDD ≤V(BR)DSS,TJ≤150℃
Rating
20
±12
4.2
3.4
33
1.25
100
-55 to +150
Unit
V
V
A
A
A
W
℃/W
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2