IRLML2246TRPBF Datasheet, PDF (1/2 Pages) International Rectifier – HEXFETPower MOSFET

Product specification
V_DS
V_{GS Max}
R_{DS(on) max}
(@V_GS = -4.5V)
R_{DS(on) max}
(@V_GS = -2.5V)
-20
±12
135
236
Application(s)
 System/Load Switch
V
V
m
m
IRLML2246TRPbF
HEXFET^® Power MOSFET
*
'
6
Micro3^TM (SOT-23)
IRLML2246TRPbF
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Multi-vendor compatibility
results in Easier manufacturing
 Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
V_DS
Parameter
Drain-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ -10V
I_D @ T_A = 70°C
Continuous Drain Current, V_GS @ -10V
I_DM
Pulsed Drain Current
P_D @T_A = 25°C
Maximum Power Dissipation
P_D @T_A = 70°C
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_JA
R_JA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
Max.
-20
-2.6
-2.1
-11
1.3
0.80
0.01
± 12
-55 to + 150
Typ.
–––
–––
Max.
100
99
Units
V
A
W
W/°C
V
°C
Units
°C/W
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