IRF640 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Product specification
TO-220-3L Plastic-Encapsulate MOSFETS
IRF640 MOSFET( N-Channel )
FEATURE
TO-220-3L
z Dynamic dv/dt Rating
z Repetitive Avalanche Rated
z Fast Switching
z Ease of Paralleling
z Simple Drive Requirement
1. GATE
DESCRIPTION
2. DRAIN
Third Generation HEXFETs from internation Rectifier provide the
3. SOURCE
designer with the best combination of fast switching ,ruggedized device
design,low on-resistance and cost effectiveness.
The TO-220-3L package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220-3L contribute to its wide
acceptance throughout the industry.
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted )
Symbol
Parameter
I_D
Continuous Drain Current, VGS @ 10 V
P_D
Power Dissipation
Linear Derating Factor
V_GS
Gate-Souse Voltage
E_AS
Single Pulse Avalanche Energy (note 1)
R_θJA
Thermal Resistance from Junction to Ambient
T_J
Junction Temperature
T_STG
Storage Temperature
Value
18
2
1.0
±20
580
62.5
150
-55~+150
Units
A
W
W/℃
V
mJ
℃/W
℃
℃
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