IRF630 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Product specification
TO-220-3L Plastic-Encapsulate MOSFETS
IRF630 N-Channel Power MOSFET
GENERAL DESCRIPTION
It uses advanced trench technology and design to provide
excellent R_DS(ON) with low gate charge .This device is suitable for
high current load applications.
FEATURE
z High current rating
z Ultra lower R_DS(on)
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
APPLICATION
z Power switching application
z Load switching in high circuit application
z DC/DC converters
TO-220-3L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
200
±20
9.3
37
250
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
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