IRF3205 Datasheet, PDF (1/4 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A⑤)

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Product specification
IRF3205
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
TO-220
10.16 ±0.20
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
1 23
#1
0.35 ±0.10
2.54TYP
[2.54 ±0.20]
(30_°)
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
1. GATE
2. DRAIN
3. SOURCE
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 10V,TC = 25
Continuous Drain Current, VGS @ 10V,TC = 100
Pulsed Drain Current*1
Power Dissipation
Linear Derating Factor
Linear Derating Factor
Avalanche Current *1
Repetitive Avalanche Energy *1
Peak Diode Recovery dv/dt *2
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Operating Junction and Storage Temperature Range
Symbol
ID
ID
IDM
PD
VGS
IAR
EAR
dv/dt
RθJC
RθCS
RθJA
TJ.TSTG
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD 62A, di/dt 207A/µs, VDD V(BR)DSS,TJ 175
Rating
110
80
390
200
1.3
20
62
20
5
0.75 (Max)
0.5
62 (Max)
-55 to + 175
Unit
A
W
W/
V
A
mJ
V/ns
/W
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