HVU133 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Product specification
HVU133
Features
Low capacitance.(C=1.0pF max)
Low forward resistance. (rf=0.7 max)
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute M axim um Ratings Ta = 25
Param eter
Reverse voltage
Power dissipation
Junction tem perature
Storage tem perature
Sym bol
VR
Pd
Tj
T stg
V a lu e
30
150
125
-55 to +125
U n it
V
mW
Electrical Characteristics Ta = 25
P aram eter
Reverse voltage
Reverse current
Forward voltage
Capacitance
Forward resistance
Symbol
VR
IR
VF
C1
C6
rf
Conditions
IR = 1 A
VR = 25 V
IF = 2 mA
VR = 1 V, f = 1 MHz
VR = 6 V, f = 1 MHz
IF = 2 mA, f = 100 MHz
Min
Typ
Max
Unit
30
V
100
nA
0.85
V
1.0
pF
0.9
0.55
0.7
Marking
Marking
P3
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