HVU132 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Product specification
HVU132
Features
Low capacitance.(C=1.0pF max)
Low forward resistance. (rf=0.7 max)
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute M axim um R atings Ta = 25
Param eter
Peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Junction tem perature
Storage tem perature
Sym bol
VRM
VR
IF
Pd
Tj
T stg
V a lu e
65
60
100
150
125
-55 to +125
U n it
V
V
mA
mW
Electrical Characteristics Ta = 25
P aram eter
Reverse current
Forward voltage
Capacitance
Forward resistance
Symbol
Conditions
Min
Typ
Max
Unit
IR
VR = 60 V
0.1
nA
VF
IF = 10 mA
1.0
V
C
VR = 1 V, f = 1 MHz
0.5
pF
rf
IF = 10 mA, f = 100 MHz
2.0
Marking
Marking
P2
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