HVR100 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Variable Capacitance Diode for AM tuner

Product specification
HVR100
Features
High capacitance ratio. (n =16.0 min)
High figure of merit. (Q =200 min)
To be usable at low voltage.
Small Resin Package (SRP) is suitable for surface mount design.
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute M axim um R atings T a = 25
Param eter
Reverse Voltage
Junction tem perature
Storage tem perature
Sym bol
VR
Tj
T stg
V a lu e
15
125
-55 to +125
U n it
V
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Max
Unit
Reverse voltage
VR
IR = 10 A
15
V
Reverse current
IR
VR = 9 V
100
nA
C1
VR = 1 V, f = 1 MHz
421.5 524.6
C3
VR = 3 V, f = 1 MHz
182
275.7
C5
Capacitance
C6
VR =5 V, f = 1 MHz
VR =6 V, f = 1 MHz
73.2
121.4
pF
42.2
72.2
C7
VR =7 V, f = 1 MHz
26.2
41.6
C8
VR = 8 V, f = 1 MHz
20.4
28.2
Capacitance ratio
n
C1 / C8
16
Figure of merit
Q
C = 450pF, f = 1 MHz
200
Matching error
ÄC/C^*1
VR = 1 to 8V
3.0
%
ESD-Capability^*1
C=200pF , Both forward and reverse direction 1 pulse.
80
V
Notes
1.Failure criterion ; IR 100nA at VR =9 V
Marking
Marking
2
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