HVD355B Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCO

Product specification
HVD355B
Features
High capacitance ratio. (n = 2.20 min)
Low series resistance. (rs = 0.60 max)
Super small Flat Lead Package (SFP) is suitable for surface mount design.
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute M axim um R atings T a = 25
Param eter
Reverse Voltage
Junction tem perature
Storage tem perature
Sym bol
VR
Tj
T stg
V a lu e
15
125
-55 to +125
U n it
V
Electrical Characteristics Ta = 25
Parameter
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
IR1
IR2
C1
C4
n
rs
Conditions
VR = 15 V
VR = 15 V,Ta = 60
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
C1 / C4
VR = 1 V, f = 470 MHz
Min
Typ
Max
Unit
10
nA
100
6.4
2.55
7.2
pF
2.95
2.2
0.6
Marking
Marking
B
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