HVD145 Datasheet, PDF (1/1 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Pin Diode for Antenna Switching

Product specification
HVD145
Features
An optimal solution for antenna switching in mobile phones.
Low capacitance. (C = 0.45 pF max)
Low forward resistance. (rf = 1.8 max)
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter
R e ve rs e vo lta g e
F orw ard current
P o w e r d is s ip a tio n
J u n c tio n te m p e ra tu re
S torage tem perature
Sym bol
VR
IF
Pd
Tj
T stg
V a lu e
60
50
150
125
-55 to +125
U n it
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Reverse current
IR
VR = 60 V
Reverse voltage
VF
IR = 2 mA
Capacitance
C
VR = 1 V, f = 1 MHz
Forward resistance
rf
IF = 10 mA, f = 100 MHz
ESD-Capability ^*1
C = 200 pF, R = 0 , Both forward
and reverse direction 1 pulse.
Note
1. Failure criterion ; IR > 100 nA at VR =60 V
Min
Typ
Max
Unit
100
A
0.9
V
0.45
pF
1.8
100
V
Marking
Marking
T5
http://www.twtysemi.com
[e-mail]
4008-318-123
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