HVD142 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for Antenna Switching

Product specification
HVD142
Features
Low capacitance. (C = 0.35 pF max)
Low forward resistance. (rf=1.5 max)
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
A b so lu te M a xim u m R a tin g s T a = 2 5
P aram eter
R everse voltage
Forward current
P ow er dissipation
Junction tem perature
S torage tem perature
Sym bol
VR
IF
Pd
Tj
T stg
V alue
30
100
150
125
-55 to +125
U nit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Reverse current
IR
VR = 30 V
Forward voltage
VF
IF = 10 mA
Capacitance
C
VR = 1 V, f = 1 MHz
Forward resistance
rf
IF = 10 mA, f = 100 MHz
ESD-Capability ^*1
C = 200 pF, R = 0 , Both forward
reverse direction 1 pulse.
Note
1. Failure criterion ; IR > 100 nA at VR =30 V
Min
Typ
Max
Unit
0.1
A
1.0
V
0.35
pF
1.5
V
100
Marking
Marking
T2
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