HVC145 Datasheet, PDF (1/1 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Pin Diode for Antenna Switching

Product specification
HVC145
Features
An optimal solution for antenna switching in mobile phones.
Low capacitance. (C = 0.45 pF max)
Low forward resistance. (rf = 1.8 max)
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
A bsolute M axim um R atings T a = 25
Param eter
R everse voltage
Forward current
P ow er dissipation
Junction tem perature
Storage tem perature
Sym bol
VR
IF
Pd
Tj
T stg
V alue
60
50
150
125
-55 to +125
U nit
V
mA
mW
Electrical Characteristics Ta = 25
P aram eter
Reverse current
Reverse voltage
Capacitance
Forward resistance
ESD-Capability *1
Symbol
Conditions
Min
Typ
Max
Unit
IR
VR = 60 V
100
nA
VF
IF = 2 mA
0.9
V
C
VR = 1 V, f = 1 MHz
0.45
pF
rf
IF = 10 mA, f = 100 MHz
1.8
C =200pF, Both forward and
reverse direction 1 pulse
100
V
Note
1. Failure criterion ; IR > 100 nA at VR = 60V.
Marking
Marking
T5
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