HSM88WA Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

Product specification
HSM88WA
Features
Proof against high voltage.
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
A verage rectified current
Junction tem perature
S torage tem perature
N ote
10m s S inew ave 1pulse
Sym bol
VR
IO
Tj
T stg
V alue
10
15
125
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Forward voltage
VF
IF = 1 mA
IF = 10 mA
Reverse current
IR
VR = 2 V
VR = 10 V
Capacitance
C
VR =0 V, f = 1 MHz
Capacitance deviation
ÄC
VR =0 V, f = 1 MHz
Forward voltage deviation
ÄVF
IF = 10 mA
ESD-Capability (Note 1)
C=200pF , Both forward and
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 400nA at VR =2 V
U nit
V
mA
Min
Typ
350
500
30
1.Base
2.Emitter
3.collector
Max
Unit
420
mV
580
0.2
A
10
0.85
pF
0.10
pF
10
mV
V
Marking
Marking
C7
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