HSM88AS Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

Product specification
HSM88AS
Features
Proof against high voltage.
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
A b so lu te M a xim u m R a tin g s T a = 2 5
P aram eter
R e ve rse vo lta g e
A ve ra g e re ctifie d cu rre n t
Ju n ctio n te m p e ra tu re
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V a lu e
10
15
125
-55 to +125
U n it
V
mA
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance
C
Capacitance deviation
ÄC
Forward voltage deviation
ÄVF
ESD-Capability (Note 1)
Note
1. Failure criterion ; IR
400nA at VR =2 V
Conditions
IF = 1 mA
IF = 10 mA
VR = 2 V
VR = 10 V
VR =0 V, f = 1 MHz
VR =0 V, f = 1 MHz
IF = 10 mA
C=200pF , Both forward and
reverse direction 1 pulse.
Min
Typ
Max
Unit
350
420
mV
500
580
0.2
A
10
0.85
pF
0.10
pF
10
mV
30
V
Marking
Marking
C1
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