HSM276SR Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

Product specification
HSM276SR
Features
High forward current, Low capacitance.
HSM276ASR which is interconnected in series configuration
is designed for balanced mixer use.
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO *
Tj
T stg
V alue
3
30
125
-55 to +125
U nit
V
mA
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse voltage
VR
VR =1.0 mA
3
V
Reverse current
IR
VR =0. 5 V
50
A
Forward current
IF
VR =0. 5 V
35
mA
Capacitance
C
VR = 0.5V, f = 1 MHz
0.90
pF
Capacitance deviation
ÄC
VR = 0.5V, f = 1 MHz
0.10
pF
C=200pF, R= 0 Both forward and
ESD-Capability (Note 1)
30
V
reverse direction 1 pulse. (Note 1)
Note
1. Failure criterion ; IR 100 A at VR =0.5 V
Marking
Marking
C9
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