HSM107S Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for System Protection

Product specification
HSM107S
Features
Low VF and high efficiency.
HSM107S which is interconnected in series configuration is designed
for protection from not only external excessive voltage but also
miss-operation on electric systems.
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Reverse voltage
Peak forward current
Non-Repetitive Peak forward surge current
Average rectified current
Junction temperature
Storage temperature
Note
1. Square wave, 10ms
Symbol
Value
Unit
VR
8
V
IFM
0.1
A
IFSM (Note 1)
0.5
A
IO
50
mA
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Reverse voltage
Reverse current
Forward voltage
ESD-Capability (Note 1)
Note
1. Failure criterion ; IR 60
Symbol
VR
IR
VF
Conditions
VR =1.0 mA
VR = 5 V
IF = 10 mA
C=200pF , Both forward and
reverse direction 1 pulse.
A at VR =5 V
Min
Typ
Max
Unit
8
pF
30
A
0.3
V
100
V
Marking
Marking
C5
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1