HSC276 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Mixer

Product specification
HSC276
Features
High forward current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
A bsolute M axim um R atings T a = 25
P aram eter
R everse V oltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V alue
3
30
125
-55 to +125
U nit
V
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
M in
Reverse voltage
VR
IR = 10 A
30
Reverse current
IR
VR = 0.5 V
Forward voltage
IF
VR = 0.5 V
35
Capacitance
C
VR = 0.5 V, f = 1 MHz
ESD-Capability (Note 1)
C=200pF , Both forward and
30
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 100mA at VR =0.5 V
Typ
Max
Unit
V
0.5
A
mA
0.85
pF
V
Marking
Marking
C2
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