HSB88WA Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING

Product specification
HSB88WA
Features
Low reverse current, Low capacitance.
CMPAK package is suitable for high density surface mounting and high speed assembly.
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V alue
10
15
125
-55 to +125
U nit
V
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF =1 mA
IF =10 mA
0.35
0.50
0.42
V
0.58
Reverse current
IR
VR =2 V
VR =10 V
0.2
A
10
Capacitance
C
VR = 0 V, f = 1 MHz
0.80
pF
Capacitance deviation
ÄC
VR = 0V, f = 1 MHz
0.10
pF
Forward voltage deviation
ÄVF
IF = 10 mA
10
mV
C=200 pF, R= 0 Both forward and
ESD-Capability (Note 1)
30
V
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 0.4 A at VR =2 V
Marking
Marking
C7
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