HSB276AS Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

Product specification
HSB276AS
Features
High forward current, Low capacitance.
HSB276AS which is interconnected in
series configuration is designed for balanced mixer use.
CMPAK package is suitable for high density surface mounting and high speed assembly.
A bsolute M axim um R atings T a = 25
P aram eter
R epetitive peak reverse voltage
R everse voltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VRRM
VR
IO
Tj
T stg
V alue
5
3
30
125
-55 to +125
U nit
V
V
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF =1.0 mA
3
V
Reverse current
IR
VR =0.5 V
50
A
Forward current
IF
VF =0.5 V
35
mA
Capacitance
C
VR = 0.5 V, f = 1 MHz
0.90
pF
Capacitance deviation
ÄC
VR = 0.5V, f = 1 MHz
0.10
pF
C=200pF, R= 0 Both forward and
ESD-Capability (Note 1)
30
V
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 100 A at VR =0.5 V
Marking
Marking
E8
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