HRW0703A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

Product specification
HRW0703A
Features
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A bsolute M axim um R atings T a = 25
Param eter
R epetitive peak reverse voltage
Forward current
N on-repetitive peak forward surge current
Junction tem perature
Storage tem perature
N o te
1. 50H z sine wave 1 pulse
Sym bol
VRRM
IF
IFSM (N ote 1)
Tj
Tst g
V alue
30
700
5
125
-55 to + 125
U nit
V
mA
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Capacitance
Symbol
VF
IR
C
Thermal resistance
Rth( j-a )
Conditions
IF = 700 mA
VR = 30 V
VR = 0 V, f = 1MHz
Polyimide board
Ceramic board
Min
Typ
Max
Unit
0.50
V
100
A
150
pF
390
/W
290
Marking
Marking
S8
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