HRW0702A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

Product specification
HRW0702A
Features
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute M axim um R atings T a = 25
Param eter
Repetitive peak reverse voltage
Forward current
Non-repetitive peak forward current
Non-repetitive peak forward surge current
Junction tem perature
Storage tem perature
N o te
1. 10m sec sine wave 1 pulse
Sym bol
VRRM
IF
IFM
IFSM (Note 1)
Tj
T stg
V a lu e
20
700
1.4
5
125
-55 to + 125
U n it
V
mA
A
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Capacitance
Thermal resistance
Symbol
VF
IR
C
Rth( j-a )
Conditions
IF = 500 mA
VR = 30 V
VR = 0 V, f = 1MHz
Polyimide board
Min
Typ
Max
Unit
0.43
V
200
A
120
pF
340
/W
Marking
Marking
S15
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