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HRW0502A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying | |||
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Product specification
HRW0502A
Features
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute M axim um Ratings Ta = 25
Param eter
Repetitive peak reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction tem perature
Storage tem perature
Note
1. 10m sec sine wave 1 pulse
Sym bol
VRRM
IO
IFSM (Note 1)
Tj
T stg
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Capacitance
Thermal resistance
Symbol
VF
IR
C
Rth( j-a )
Conditions
IF = 500 mA
VR = 20 V
VR = 0 V, f = 1MHz
Polyimide board
V a lu e
20
500
5
125
-55 to + 125
U n it
V
mA
A
Min
Typ
Max
0.40
200
120
340
Unit
V
A
pF
/W
Marking
Marking
S10
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