HRW0302A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

Product specification
HRW0302A
Features
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute M axim um Ratings Ta = 25
Param eter
Repetitive peak reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction tem perature
Storage tem perature
Note
1. 10m sec sine wave 1 pulse
Sym bol
VRRM
IO
IFSM (Note 1)
Tj
T stg
V a lu e
20
300
3
125
-55 to + 125
U n it
V
mA
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Capacitance
Thermal resistance
Symbol
VF
IR
C
Rth( j-a )
Conditions
IF = 200 mA
VR = 20 V
VR = 0 V, f = 1MHz
Polyimide board
Min
Typ
Max
Unit
0.40
V
100
A
100
pF
340
/W
Marking
Marking
S11
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