HRW0203A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

Product specification
HRW0203A
Features
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A bsolute M axim um R atings T a = 25
Param eter
R epetitive peak reverse voltage
A verage rectified current
N on-repetitive peak forward surge current
Junction tem perature
Storage tem perature
N o te
1. 50 H z sine wave 1 P ulse
Sym bol
VRRM
IO
IFSM (Note 1)
Tj
T stg
V alue
20
200
2
125
-55 to + 125
U nit
V
mA
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Capacitance
Symbol
VF
IR
C
Conditions
IF = 200 mA
VR = 30 V
VR = 0 V, f = 1MHz
Min
Typ
Max
Unit
0.50
V
50
A
40
/W
Marking
Marking
S5
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