HRW0202B Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

Product specification
HRW0202B
Features
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
A bsolute M axim um R atings T a = 25
Param eter
R epetitive peak reverse voltage
A verage rectified current
N on-repetitive peak forward surge current
Junction tem perature
Storage tem perature
Sym bol
VRRM
IO
IFSM
Tj
T stg
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
V alue
20
200
3
125
-55 to + 125
U nit
V
mA
A
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Thermal resistance
Symbol
VF
IR
Tsh( j-a )
Conditions
IF = 100 mA
VR = 20 V
Polyimide board
Min
Typ
Max
Unit
0.42
V
10
A
400
/W
Marking
Marking
S18
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