HR1A3M Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital Transistors

SMD Type
Product specification
HR1A3M
Features
Up to 2A High Current Drives Such As IC Outputs and
Actuators Available
On-chip Bias Resistor
Low Power Consumption During Drive
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Total Power Dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-10
V
IC(DC)
-1.0
A
IC(pulse) *1
-2.0
A
IB(DC)
-0.02
A
PT *2
2.0
W
Tj
150
Tstg
-55 to +150
*1 PW 10ms, Duty Cycle 50%
*2 When 0.7mm x 16cm² ceramic board is used.
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
DC Current Gain
Low Level Output Voltage
Low Level Input Voltage
Input Resistance
Emitter-Base Resistance
* PW 350 s, Duty Cycle 2%
Symbol
Testconditons
ICBO VCB = -60V, IE = 0
VCE = -2.0V , IC = -0.1A
hFE * VCE = -2.0V , IC = -0.5A
VCE = -2.0V , IC = -1.0A
VOL * VIN = -5.0V, IC = -0.4A
VIL * VCE = -5.0V, IC = -100 A
R1
R2
Min Typ Max Unit
-100 nA
50
100
50
-0.4 V
-0.3 V
0.7 1.0 1.3 k
0.7 1.0 1.3 k
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