HN1K05FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Product specification
HN1K05FU
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.5 to 1.0 V
· Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
Rating
Unit
V_DS
20
V
V_GSS
10
V
I_D
100
mA
P_D (Note)
200
mW
T_ch
150
°C
T_stg
-55 to 150
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Weight: 6.8 mg
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance 1
Drain-Source ON resistance 2
Drain-Source ON resistance 3
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = 10 V, V_DS = 0 V
¾
¾
1
mA
V _{(BR) DSS} I_D = 100 mA, V_GS = 0 V
20
¾
¾
V
I_DSS
V_DS = 20 V, V_GS = 0 V
¾
¾
1
mA
V_th
V_DS = 1.5 V, I_D = 0.1 mA
0.5
¾
1
V
ïY_fsï
V_DS = 1.5 V, I_D = 10 mA
35
70
¾
mS
R_{DS (ON) 1} I_D = 1 mA, V_GS = 1.2 V
¾
15
50
W
R_{DS (ON) 2} I_D = 10 mA, V_GS = 1.5 V
¾
10
40
W
R_{DS (ON) 3} I_D = 10 mA, V_GS = 2.5 V
¾
7
28
W
C_iss
V_DS = 1.5 V, V_GS = 0 V, f = 1 MHz
¾
12
¾
pF
C_rss
V_DS = 1.5 V, V_GS = 0 V, f = 1 MHz
¾
3.4
¾
pF
C_oss
V_DS = 1.5 V, V_GS = 0 V, f = 1 MHz
¾
12
¾
pF
t_on
V_DD = 1.5 V, I_D = 10 mA,
V_GS = 0 to 1.5 V
t_off
V_DD = 1.5 V, I_D = 10 mA,
V_GS = 0 to 1.5 V
¾ 0.35 ¾
ms
¾
0.2
¾
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