HN1C07F Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications

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Features
Excellent Current Gain(hFE)linearity
:hFE=25(min) at VCE=6V,IC=400mA
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Product specification
HN1C07F
Unit: mm
1 pin mark
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
500
mA
IB
50
mA
PD
300
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base emitter voltage *
Output capacitance
Transition frequency
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 50V, IE=0
IEBO VEB = 5V, IC = 0
VCE = 1V , IC = 100mA
hFE
VCE = 6V , IC = 400mA
VCE(sat) IC = 100mA, IB = 10mA
VBE VCE = 1V, IC = 100mA
Cob VCE = 6V, IE = 0, f = 1MHz
fT VCE = 6V, IE = 20mA
Min Typ Max Unit
0.1
A
0.1
A
70
240
25
0.1 0.25 V
0.8 1.0 V
7
pF
300
MHz
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