FZTA92 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SMD Type
Transistors
Product specification
FZTA92
Features
High breakdown voltage
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Symbol
Rating
Unit
VCBO
-300
V
VCEO
-300
V
VEBO
-5
V
IB
-100
mA
IC
-500
mA
Ptot
2
W
Tj:Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
Transition Frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cobo
Testconditons
IC=-100ìA, IE=0
IC=-1mA, IB=0*
IE=-100ìA, IC=0
VCB=-200V, IE=0
VEB=-3V, IC=0
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-10mA, VCE=-20V,f=20MHz
VCB=-20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
Min Typ Max Unit
-300
V
-300
V
-5
V
-0.25 ìA
-0.1 ìA
-0.5 V
-0.9 V
25
40
25
50
MHz
6 pF
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