FZTA42 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SMD Type
Transistors
Product specification
FZTA42
Features
Suitable for video output stages in TV sets
and switch mode power supplies
High breakdown voltage
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Symbol
Rating
Unit
VCBO
300
V
VCEO
300
V
VEBO
5
V
IB
100
mA
IC
500
mA
Ptot
2
W
Tj:Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
Transition Frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cobo
Testconditons
IC=100ìA, IE=0
IC=1mA, IB=0*
IE=100ìA, IC=0
VCB=200V, IE=0
VEB=5V, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=10mA, VCE=20V,f=20MHz
VCB=20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
Min Typ Max Unit
300
V
300
V
5
V
0.1 ìA
0.1 ìA
0.5 V
0.9 V
25
40
40
50
MHz
6 pF
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