FZT688B Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SMD Type
Transistors
Product specification
FZT688B
Features
Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A.
Gain of 400 at IC=3 Amps and very low saturation voltage.
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Power dissipation
Operating and storage temperature range
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 base
2 collector
3 emitter
Symbol
Rating
Unit
VCBO
12
V
VCEO
12
V
VEBO
5
V
IC
4
A
ICM
10
A
Ptot
2
W
Tj,Tstg
-55 to +150
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