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| FZT549 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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Product specification
FZT549
â Features
â Power Collector dissipation: PC=2W
â Continuous Collector Current: IC=-1A
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
â Absolute Maximum Ratings Ta = 25â
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous Collector Current
Peak collector current
Power Collector dissipation
Operating and storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
Tj,Tstg
Rating
-35
-30
-5
-1
-2
2
-55 to +150
â Electrical Characteristics Ta = 25â
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
DC current gain
Transition frequecy
Output capacitance
* Pulse test: tp ⤠300 μs; d ⤠0.02.
â Marking
Marking
549
Symbol
Test conditons
V(BR)CBO IC=-100μA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100μA
ICBO VCB=-30V
IEBO VEB=-4V, IC=0
VCE(sat) IC=-1A,IB=-100mA
VBE(sat) IC=-1A,IB=-100mA
VBE(ON) IC=-1A,VCE=-2V
IC=-50mA, VCE=-2V*
IC=-500mA,VCE=-2V
hFE
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
fT IC=-100mA,VCE=-5V,f=100MHz
Cob VCB=-10V,f=1MHz
Unit
V
V
V
A
A
W
â
Min Typ Max Unit
-35
V
-30
V
-5
V
-100 nA
-100 nA
-0.5 V
-1.25 V
-1.0 V
70
100
300
80
30
100
MHz
10 pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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