FZT489 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SMD Type
TransistIoCrs
Product specification
FZT489
■ Features
● Power Dissipation: PC=2W
● Continuous Collector Current: IC=1A
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous Collector Current
power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
30
V
VEBO
5
V
IC
1
A
PC
2
W
Tj
150
℃
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter Cut-Off Current
DC current gain
Collector to emitter saturation voltage
Output capacitance
Transition frequency
■ Marking
Marking
489
Symbol
Test conditons
VCBO IC=100μA
VCEO IC=10mA
VEBO IE=100μA
ICBO VCB = 30 V, IE = 0
IEBO VEB=4V,IC=0
IC = 1.0 mA; VCE = 2V
hFE IC = 1A; VCE = 2V
IC = 2A; VCE = 2V
IC = 1A; IB = 100mA
VCE(sat)
IC = 2A; IB = 200mA
Cob VCB = 10 V, IE = 0,f=1.0MHz
fT IC = 50 mA; VCE =10V; f = 100 MHz
Min Typ Max Unit
50
V
30
V
5
V
100 nA
100 nA
100
100
300
60
0.3 V
0.6 V
10 pF
150
MHz
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