FZT1151A Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SMD Type
Transistors
Product specification
FZT1151A
■ Features
● Low saturation Voltage
● High Gain
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous Collector Current
power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-45
V
VCEO
-40
V
VEBO
-5
V
IC
-3
A
PC
2.5
W
Tj
150
℃
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cut-off current
Emitter Cut-Off Current
DC current gain
Collector to emitter saturation voltage
Output capacitance
Transition frequency
■ Marking
Marking
1151A
Symbol
Test conditons
VCBO IC=-100μA
VCEO IC=-10mA
VEBO IE=-100μA
ICBO VCB =- 36 V, IE = 0
IEBO VEB=-4V,IC=0
IC = -10 mA; VCE = -2 V
hFE IC = -500mA; VCE =- 2V
IC = -2A; VCE = -2V
IC =- 1.8A; IB = -70mA
VCE(sat)
IC = -3A; IB = -250mA
Cob VCB =-10 V, IE = 0,f=1.0MHz
fT IC = -50 mA; VCE =-10V; f = 50 MHz
Min Typ Max Unit
-45
V
-40
V
-5.0
V
-100 nA
-100 nA
270 450
250
800
180 300
-0.26 V
-0.3 V
40
pF
145
MHz
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