FTD2011 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Load Switching Applications

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MOSFEICT
Product specification
FTD2011
■ Features
● RDS(ON)=30mΩ Max. @VGS=4V
● RDS(ON)=45mΩ Max. @VGS=2.5V
D1
S1
S1
G1
TSSOP-8
Unit: mm
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
D2
7 : Source2
S2
8 : Drain2
S2
G2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Current
-Continuous
-Pulsed
(NOTE 1)
Power Dissipation
(NOTE 2)
Thermal Resistance,Junction- to-Ambient
Operating Junction and Storage Temperature Range
Note: 1. PW≤10μs, duty cycle≤1%
2. Mounted on a ceramic board (1000mm²Ã—0.8mm)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
Tj.Tstg
Rating
20
±10
5
20
1.3
96
-55 to 150
Unit
V
V
A
A
W
℃/W
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
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