FMW3 Datasheet, PDF (1/1 Pages) Rohm – General purpose (dual transistors)

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■ Features
● High breakdown voltage
● Power dissipation: PC=300mW
● Collector Curren: IC=50mA
FMW3
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Product specification
FMW3
5
4
1
2
3
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation(TOTAL)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
120
120
5.0
50
300
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
■ Marking
Marking
W3
Symbol
Test conditions
V(BR)CBO Ic= 50μA, ^IE⁼⁰
V(BR)CEO Ic= 1 mA， IB=0
V(BR)EBO IE= 50 μA， IC=0
IcBO VCB= 100 V , IE=0
IEBO VCE= 4.0V , IC=0
hFE VCE= 60V, IC= 2.0mA
VCE(sat) IC=10 mA, IB= 1.0mA
fT VCE= 12V, IC= 2mA,f=100MHz
Unit
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
120
V
120
V
5.0
V
0.5 μA
0.5 μA
180
820
0.5 V
140
MHz
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